2,4,6,8-TETRAMETHYLCYCLOTETRASILOXANE Chemische Eigenschaften,Einsatz,Produktion Methoden
R-Sätze Betriebsanweisung:
R10:Entzündlich.
R36:Reizt die Augen.
S-Sätze Betriebsanweisung:
S16:Von Zündquellen fernhalten - Nicht rauchen.
S26:Bei Berührung mit den Augen sofort gründlich mit Wasser abspülen und Arzt konsultieren.
S36:DE: Bei der Arbeit geeignete Schutzkleidung tragen.
Beschreibung
2, 4, 6, 8-TETRAMETHYLCYCLOTETRASILOXANE can be used as the precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, and gate dielectrics in thin-film transistors (TFT) (for example, for the preparation of ultralow dielectric constant pSiCOH film), and is a component of photochemically formed SiOX monolayers on TiO. It is a good impregnant of photoelectric material. It can be used for the manufacturing of modified siloxane with defined hydrogen content and chain quality.
Chemische Eigenschaften
Colorless or yellowish transparent liquid
Verwenden
2,4,6,8-Tetramethylcyclotetrasiloxane can occur addition reaction with unsaturated alkenes, so it’s utilized widely to synthesize variety functional reactive silicone fluids which is used to form silicone block copolymer, or used as crosslinker of vinyl addition silicone rubber.
Tetramethyl-cyclotetrasiloxane is a good impregnant of photoelectric material. It is used to manufacture of modified siloxane with defined hydrogen content and chain quantity. It is also used in production of silicone polymers and acts as a precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics and semiconductors.
Allgemeine Beschreibung
Atomic number of base material: 14 Silicon
Einzelnachweise
https://www.alfa.com/zh-cn/catalog/L16642/
http://www.sigmaaldrich.com/catalog/product/aldrich/512990?lang=en®ion=US
Grill, A., and V. Patel. "Ultralow dielectric constant pSiCOH films prepared with tetramethylcyclotetrasiloxane as skeleton precursor." Journal of Applied Physics 104.2(2008):107.
Zhang, Jianming, D. S. Wavhal, and E. R. Fisher. "Mechanisms of SiO2 film deposition from tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas." Journal of Vacuum Science & Technology A Vacuum Surfaces & Films 22.1(2004):201-213.
Fujino, Katsuhiro, et al. "Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition, Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone." Japanese Journal of Applied Physics 33. 4A (1994):2019-2024.
2,4,6,8-TETRAMETHYLCYCLOTETRASILOXANE Upstream-Materialien And Downstream Produkte
Upstream-Materialien
2,4,6,8,10,12-HEXAMETHYLCYCLOHEXASILOXANE, 96
2,4,6,8,10-Pentamethylcyclopentasiloxan
Diethylether
Wasser
Downstream Produkte
2 4 6-TRIMETHYLCYCLOTRISILOXANE 99
1,1,1,3,5,7,7,7-Octamethyltetrasiloxan
1,1,1,3,5,5,5-Heptamethyltrisiloxan